References

[Abra65] Handbook of Mathematical Functions With Formulas, Graphs, and Mathematical Tables, 4^th printing, ed. Milton Abramowitz and Irene A. Stegun. (National Bureau of Standards, Washington. 1965).

[AD76] Nonlinear Circuits Handbook, 2nd ed., edited by D. H. Sheingold (Analog Devices, Inc., Norwood, MA, 1976), p. 43.

[Alpha92] Semiconductor Devices, RF through Millimeter Wave, Alpha Semiconductor Devices Div., Woburn, MA. p. 4-72. 1992.

[Amem82] Yoshihito Amemiya, Takayuki Sugeta, and Yoshihiko Mizushima, "Novel Low-Loss and High-Speed Diode Utilizing "Ideal" Ohmic Contact," IEEE Trans. Elec. Dev., vol. ED-29, pp. 236-242. 1982.

[Anto88] Paolo Antognetti and Guiseppe Massobrio, Semiconductor Device Modeling with SPICE, p.27. McGraw-Hill, NY. 1988.

[Bali87] B. Jayant Baliga, Modern Power Devices, NY: John Wiley & Sons, 1987, p. 68.

[Belk94] V. S. Belkin and G. I. Shulzchenko, "Forming of high-voltage nanosecond and subnanosecond pulses using standard power rectifying diodes", Rev. Sci. Instr., vol. 65, pp. 751-753. 1994.

[Bend67] Hansjochen Benda and Eberhard Spenke, "Reverse Recovery Processes in Silicon Power Rectifiers," Proc. IEEE, vol. 55, p. 1331, 1967.

[Bend68] H. Benda and F. Dannhäuser, "Switching Processes in Diffused Rectifiers - I - Theory", Solid-State Electronics, vol. 11, p. 1. 1968.

[Boff60] A. F. Boff, J. Moll, and R. Shen, "A New High Speed Effect in Solid State Devices," 1960 International Solid-State Circuits Conference - Digest of Technical Papers.

[Boon] Models 71A and 71AR Instruction Manual, (Boonton Electronics Corp., Parsippany, N.J.), p. 3-13. Date unknown.

[Brow87] David Brown and Don Martin, "Subnanosecond high-voltage pulse generator," Rev. Sci. Instr., vol. 58, pp. 1523-9. 1987.

[Bulu91] Constantin Bulucea, "Breakdown voltage of diffused epitaxial junctions", Solid-St. Electron. 34, 1313. 1991.

[Came66] H. R. Camenzind, IEEE Trans. Audio and Electroacoustics, vol. AU-14, 136. 1966.

[Chud69] W. J. Chudobiak and D. F. Page, "Frequency and Power Limitations of Class-D Transistor Amplifiers", IEEE J. Solid-State Circ. vol. SC-4, p. 25. 1969.

[Chud95a] M. J. Chudobiak, "A simple circuit for measuring C-V profiles at kilovolt voltages"Rev. Sci. Instr., vol. 66, p. 3703. 1995.

[Chud95b] Michael J. Chudobiak, "A high speed, medium voltage pulse amplifier for diode reverse transient measurements," Rev. Sci. Instr, vol. 66, p. 5352, 1995.

[Chud96a] M. J. Chudobiak and D. J. Walkey, "Subnanosecond 300 V diffused step recovery diode," Electronics Letters, in press.

[Chud96b] Michael J. Chudobiak and David J. Walkey, "Forward Transient Charge Injection in psn Diodes at Medium to High Injection Levels," Trans. Elec. Dev., in press.

[Clar71] K. K. Clarke and D. T. Hess, Communication Circuits: Analysis and Design (Addison-Wesley, Reading, MA, 1971), p. 418.

[Com93] Comlinear Data Book, (Comlinear, Fort Collins, CO, 1993), p. 3-19. 1993.

[Coop83] R. W. Cooper and K. A. Jaggers, "Design and Performance of Fast High-Voltage Epi-Diodes," PESC '83, pp. 150-153. 1983.

[Darl95] Robert B. Darling, "A Full Dynamic Model for pn-Junction Diode Switching Transients," IEEE Trans. Elec. Dev., vol. 42, p.969. 1995.

[Dean69] R. H. Dean, "Transient Double Injection in Trap-Free Semiconductors", J. Appl. Phys., vol. 40, pp. 585-595. 1969.

[Edwa89] C. H. Edwards, Jr., and David E. Penney, Elementary Differential Equations with Boundary Value Problems, 2^nd ed. (Prentice Hall, Englewood Cliffs, NJ, 1989), p. 570.

[Foci96] R. J. Focia, E. Schamiloglu, and C. B. Fleddermann, "Simple techniques for the generation of high peak power pulses with nanosecond and subnanosecond rise times", Rev. Sci. Instr., vol, 67, pp. 2626-2629. 1996.

[Ghan77] S. K. Ghandi, Semiconductor Power Devices (John Wiley and Sons, NY. 1977).

[Ghan83] Sorab K. Ghandi, VLSI Fabrication Principles - Silicon and Gallium Arsenide, (Wiley-Interscience, NY, 1983), p. 107.

[Gorb88] A. V. Gorbatyuk et. al., "Theory of Quasi-diode Operation of Reversely Switched Dinistors", Solid-State Electronics, vol. 31, pp. 1483-1491. 1988.

[Grek81] I. V. Grekhov, A. F. Kardo-Sysoev, L. S. Kostina, and S. V. Shenderey, "High-Power Subnanosecond Switch," Elec. Lett., vol. 17, pp. 422-3. 1981.

[Grek83] I. V. Grekhov et. al., "Superpower Switch of Microsecond Range", Solid-State Electronics, vol. 26, p. 1132. 1983.

[Grek85] I. V. Grekhov, V. M. Efanov, A. F. Kardo-Sysoev, and S. V. Shenderei, "Power Drift Step Recovery Diodes", Solid-State Electronics, vol. 28, pp. 597-599. 1985.

[Grek89] I. V. Grekhov, "New Principles of High Power Switching with Semiconductor Devices", Solid-State Electronics, vol. 32, pp. 923-930. 1989.

[Grov65] A. S. Grove and D. J. Fitzgerald, "The Origin of Channel Currents Associated with P+ Regions in Silicon", IEEE Trans. Elec. Dev., vol. ED-12, no. 12. p. 619. 1965.

[Hili60] J. Hilibrand and R. D. Gold, "Determination of the Impurity Distribution in Junction Diodes from Capacitance-Voltage Measurements", RCA Review, vol. 21, 245 (1960).

[Horo89] P. Horowitz and W. Hill, The Art of Electronics, 2nd ed., (Cambridge Univ. Press, Cambridge, 1989), p. 274.

[Howe88] P. L. Hower and C. E. Weaver, "The SPIN Rectifier, a New Fast-Recovery Device", PESC '88, pp. 709-717. 1988.

[HP90] Microwave & RF Designer's Catalog 1990-1991 (Hewlett-Packard, Palo Alto, CA, 1990).

[HP918] Hewlett-Packard Application Note 918 (Hewlett-Packard, Palo Alto, CA).

[Jaeg88] R. C. Jaeger, Introduction to Microelectronic Fabrication, p. 52. Addison-Wesley, MA. 1988.

[Kard96] Personal communication with Dr. Alexei Kardo-Sysoev, at the A. F. Ioffe Physico-Technical Institute, Russian Academy of Science, 194021, St. Petersburg, Russia. July 1996.

[King54] Robert H. Kingston, "Switching Time in Junction Diodes and Junction Transistors," Proc. IRE, vol. 42, p. 829. 1954.

[Ko61] W. H. Ko, "The Reverse Transient Behaviour of Semiconductor Junction Diodes," IRE Trans. Elec. Dev., vol. ED-8, p. 123. 1961.

[Ko61b] Wen-Hsiung Ko, "The Forward Transient Behaviour of Semiconductor Junction Diodes,"Solid-State Electronics, vol. 3, p. 59. 1961.

[Kocs76] Miklós Kocsis, High-Speed Silicon Planar-Epitaxial Switching Diodes (Adam Hilger, London, 1976), p.50.

[Koko66] R. A. Kokosa and R. L. Davies, "Avalanche Breakdown of Diffused Silicon p-n Junctions", IEEE Trans. Electron Devices ED-13, 874. 1966.

[Krau80] H. L. Krauus, C. W. Bostian, F. H. Raab, Solid State Radio Engineering (Wiley, New York, 1980), p. 467

[Kuno64] H. J. Kuno, "Analysis and Characterization of P-N Junction Diode Switching," IEEE Trans. Elec. Dev., vol. 11, p. 8. 1964.

[Lax54] Benjamin Lax and S. F. Neustadter, "Transient Response of a p-n Junction," J. Appl. Phys., vol. 25, p.1148. 1954.

[Lind65] Joseph Lindmayer and Charles Y. Wrigley, Fundamentals of Semiconductor Devices (D. Van Nostrand Co., Princeton, NJ. 1965). p. 52.

[MACO88] Semiconductor Products Master Catalog, M/A-COM, Burlington, MA. p. 8-13. 1988.

[Matt83] R. J. Matthys, Crystal Oscillator Circuits, (Wiley-Interscience, NY, 1983), p. 174.

[Medi93] TMA Medici, Two-Dimensional Device Simulation Program, Version 1.1, Volume 1, p.2-58. Technology Modeling Associates, Inc. 1993.

[Mehr93] Manoj Mehrotra and B. J. Baliga, "Comparison of High Voltage Power Rectifier Structures," Int. Symp. Power Semi. Dev., pp. 199-204. 1993.

[Meye92] Bernard S. Meyerson, "UHV/CVD Growth of Si and Si:Ge Alloys: Chemistry, Physics, and Device Applications," Proc. IEEE, vol. 80, pp. 1592-1608. 1992.

[Moll62] J. L. Moll, S. Krakauer, and R. Shen, "P-N Junction Charge-Storage Diodes," Proc. IEEE, vol. 50, p.43, 1962.

[Moll64] John L. Moll, Physics of Semiconductors, McGraw-Hill, NY. p. 125. 1964.

[Moll69] John L. Moll and Stephen A. Hamilton, "Physical Modeling of the Step Recovery Diode for Pulse and Harmonic Generation Circuits", Proc. IEEE, vol. 57, p. 1250, 1969.

[Mori91] Mutsuhiro Mori, Yasumichi Yasuda, Naoki Sakurai and Yoshitaka Sugawara, "A Novel Soft and Fast Recovery Diode (SFD) with Thin p-layer Formed by Al-Si Electrode", Int. Symp. Power Semi. Dev., pp. 113-117. 1991.

[Neud89] Gerold W. Neudeck, The PN Junction Diode, 2^nd ed., vol. 2 of the Modular Series of Solid State Devices. (Addison-Wesley, Reading, Mass., 1989). p. 119.

[Page65] D. F. Page, W. D. Hindson, W. J. Chudobiak, "On Solid-State Class-D Systems", Proc. IEEE vol. 53, p. 423. 1965.

[Palm90] D. W. Palmer, in Growth and Characterisation of Semiconductors, edited by R. A. Stradling and P. C. Klipstein (Adam Hilger, Bristol, England, 1990), p. 196.

[Rauh90] H. Rauh, S. C. Jain, R. P. Mertens, and R. J. Van Overstraeten, "Rigorous analysis of the reverse recovery process in junction diodes allowing for arbitrary widths of the base and the emitter as well as heavy doping effects," Solid-State Electronics, vol. 33, p.205. 1990.

[Roul90] David J. Roulston, Bipolar Semiconductor Devices. New York: McGraw-Hill, p. 138, 1990.

[Schr93] M. Schröter, DEVICE - User's Guide to Version 1.6. May 1993.

[Sedr91] Adel S. Sedra and Kenneth C. Smith, Microelectronic Circuits, 3^rd ed. (Saunders College Publishing, Philadelphia, 1991). p. E-15.

[Shim84] Yoshiteru Shimizu, Masayoshi Naito, Susumu Murakami, and Yoshio Terasawa, "High-Speed Low-Loss p-n Diode Having a Channel Structure", IEEE Trans. Elec. Dev., vol. ED-31, pp. 1314-1319. 1984.

[Slat80] J. A. G. Slatter and J. P. Whelan, "p-i-n Diode Recovery Storage Time", Solid-State Electronics, vol. 23, pp. 1235-1242. 1980.

[Spie65] Murray R. Spiegel, Schaum's Outline Of Theory and Problems of Laplace Transforms, NY: McGraw-Hill, 1965, p. 252.

[Sun92] C. K. Sun, P. K. L. Yu, Ching-Ten Chang, and D. J. Albares, "Simulation and Interpretation of Fast Rise Time Light-Activated p-i-n Diode Switches,"IEEE Trans. Elec. Dev., vol. 39, pp. 2240-7. 1992.

[Sze66] S. M. Sze and G. Gibbons, "Avalanche Breakdown Voltages of Abrupt and Linearly Graded p-n Junctions in Ge, Si, GaAs and GaP", Appl. Phys. Lett., 8, 111. 1966.

[Sze81] S. M. Sze, Physics of Semiconductor Devices, 2^nd ed. (Wiley-Interscience, NY, 1981), p.850.

[Van70] R. Van Overstraeten and H. De Man, "Measurement of the ionization rates in diffused silicon p-n junctions", Solid-St. Electron. 13, 583. 1970.

[Vars69] R. C. Varshney and D. J. Roulston, "Transient Behaviour of a Range of P⁺-N-N⁺ Diodes With Narrow Centre Regions", Solid-State Electronics, vol. 13, pp. 1081-1095. 1969.

[Warn72] R. M. Warner, Jr., "Avalanche breakdown in silicon diffused junctions", Solid-St. Electron. 15, 1303. 1972.

[Wils73] P. R. Wilson, "Avalanche Breakdown Voltage of Diffused Junctions in Silicon", Solid-St. Electron. 16, 991. 1973.

[Woll81] E. D. Wolley and S. F. Bevacqua, IEEE Industrial Application Society Meeting Digest, (IEEE, Piscataway, NJ, 1981), p. 797.