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The Use of Parasitic Nonlinear Capacitors in Class E Amplifiers

Abstract

The most common class E amplifier configuration uses a single transistor with a shunt capacitor and a series resonant output filter. Until now a linear shunt capacitance has been assumed. However, to achieve operation at 900 MHz and above, it is of interest to rely solely upon the nonlinear parasitic collector-substrate capacitance of the transistor. An analytical theory for operation at 50% duty cycle and nonlinear capacitance is presented in this paper, and the effects on the power capability of the amplifier are discussed.

I. Introduction

Class E tuned power amplifiers have gained widespread acceptance since their introduction [1] due to their simplicity, high efficiency, excellent designability, and relative intolerance to circuit variations [2]. Figure 1 shows the most common class E configuration.

Avtech image

Fig. 1. Basic class E amplifier configuration.

The transistor acts as a switch, rather than as an amplifier. When the transistor switch is closed, the collector voltage ideally is zero, and a large collector current can exist. When the switch is open, no current flows, but a large collector voltage can exist. Thus, simultaneous nonzero voltage and current is avoided, eliminating transistor power losses in the fully-open and fully-closed states. The capacitor C1 acts to hold the collector voltage vc at zero volts during the on-to-off switch transition, to avoid switching losses. The CF, LF, jX, R network is designed such that the collector voltage falls back to zero just before the off-to-on transition, again to avoid switching losses. Typical collector or drain voltage and current waveforms for an optimally tuned class E amplifier are shown in Figure 2.

Avtech image

Fig. 2. Typical collector voltage and current waveforms.

This circuit has been extensively analyzed [1]-[11], however these analyses have all assumed that the shunt capacitance was constant. As operating frequencies reach 900 MHz and beyond, the shunt capacitance predicted by these analyses may become comparable to the parasitic collector-to-substrate capacitance of the transistor. For this reason, it is of interest to study the response of a Class E amplifier with a shunt capacitance of the form:

Avtech image (1.1)

This is the capacitance due to a step junction with built-in potential Vbi, and reverse bias V, as might occur at the collector-substrate junction. If the substrate is grounded, then V corresponds to the collector voltage. This is the case that is studied in this paper.

This paper will derive expressions for the circuit parameters required for 100% efficiency. To avoid the need for numerical analysis, the switching duty cycle is assumed to be 50%, which is the optimum for a circuit using a linear capacitance [4].

II. Basic Voltage and Current Relations

The assumptions made in this analysis are: a) a constant current I flows through the RF choke, b) the transistor switch is open for Avtech image, and closed for Avtech image, and c) the output filter consisting schematically of LF and CF is tuned to the output frequency Avtech image and has infinite Q.

Following the conventional analysis presented by Raab [4], the output voltage and current can be written:

Avtech image (2.1)

Avtech image (2.2)

where c and Avtech image are to be determined, and Avtech image.

The impedance jX introduces a phase shift between the fundamental component of the collector voltage and the output, so the voltage v1 may be written from simple considerations as:

Avtech image (2.3)

where

Avtech image (2.4)

and

Avtech image (2.5)

When the transistor switch is open, the capacitor current icap is the difference between the constant choke current I and the output current, so

Avtech image (2.6)

Knowing the capacitor current one can then calculate the collector voltage using

Avtech image (2.7)

Avtech image (2.8)

Avtech image (2.9)

Evaluating the integrals in (2.9) and rearranging yields the collector voltage for . The collector voltage is:

Avtech image(2.10)

In the following sections expressions for the circuit parameters I, C0, Avtech image, Avtech image, c, and X are derived for optimum operation in terms of the load resistance R, supply voltage Vcc, junction barrier voltage Vbi, and frequency Avtech image.

III. Optimum Operation

For optimum operation the collector voltage should be zero during the closing of the switch to eliminate switching power losses, and the voltage rate of change should be zero at this time to allow for slight mistuning [1]. For

Avtech image (3.1)

equation (2.10) reduces to

Avtech image (3.2)

For the second condition, equation (2.7) implies zero capacitor current, so (2.6) can be simplified to

Avtech image (3.3)

Dividing (3.3) by (3.2) yields

Avtech image (3.4)

or

Avtech image (3.5)

The phase of the class E output waveform is not changed by the presence of the capacitor nonlinearity.

IV. Power Supply Requirements

Since no switching losses occur and there are no other loss mechanisms, the ideal amplifier is 100% efficient. This implies that the input and output powers are equal, or

Avtech image (4.1)

Using (3.3) to eliminate c yields

Avtech image (4.2a)

Avtech image (4.2b)

Similarly, using (3.3) to eliminate IR from (4.1) determines the output voltage:

Avtech image (4.3a)

Avtech image (4.3b)

Thus the supply current and the output voltage are also not affected by the capacitance nonlinearity.

By virtue of the choke in the DC power supply path, the average collector voltage must be Vcc. Thus

Avtech image (4.4a)

Avtech image (4.4b)

After integrating, and substituting (3.2) and (3.3) for Avtech image and Avtech image in the resulting equation, (4.4b) simplifies to:

Avtech image (4.5)

Using (4.3a) to eliminate c and (4.2a) to eliminate I in (4.5) produces an expression where C0 is the only unknown:

Avtech image (4.6)

This expression is quadratic in C0; the physically meaningful root is:

Avtech image (4.7)

Equation (4.7) allows the calculation of the optimum parasitic capacitance for a transistor designed to operation at a given voltage, frequency and load. Alternatively, if the parasitic capacitance is given, the optimum power supply voltage for a given load and frequency can be determined.

V. Fourier Analysis

The angle Avtech image, used in (2.5) to determine the reactance X, can be determined from Fourier analysis of the collector voltage. The fundamental component of Avtech image must equal Avtech image, so that

Avtech image (5.1)

However, it is easier to examine the quadrature component, which must equal zero:

Avtech image (5.2)

Performing this integration, using the expression in (2.10) for vc(), and substituting (3.2) and (3.3) for Avtech image and Avtech image in the resulting equation produces

Avtech image (5.3)

Now the reactance X can be calculated by rearranging (2.5) to obtain

Avtech image (5.4)

Figure 3 shows a plot of the ideal reactance X versus the supply voltage, for various degrees of nonlinearity. The condition vbi = Avtech image is equivalent to the case of a linear capacitor.

Avtech image

Fig. 3. Optimum circuit reactance X.

VI. Power Capability

It can be seen from this analysis that while the presence of a nonlinear capacitor does not affect the supply current or output voltage, as compared to a linear capacitor, it does affect the choice of X and the shape of the collector voltage. This implies a change in the normalized power capability, a figure of merit defined as [12]

Avtech image (6.1)

The maximum output power Po,max is equal to the input power, VccI. The maximum collector current ic,max occurs when icap = 0 and the output current is at its minimum, that is

Avtech image (6.2)

Determining the maximum collector voltage is more involved. The maximum voltage must occur when Avtech image equals zero, which implies that icap = 0, so (2.6) gives

Avtech image (6.3)

Equation (3.3) can be used to eliminate I, R, and c from (6.3), producing

Avtech image (6.4)

If this angle is substituted into (2.10), the maximum voltage can be found. It is

Avtech image (6.5)

The ratio vmax/Vcc is plotted for various values of Vbi and Vcc in Figure 4. Figure 4 shows the significant increase in maximum collector voltage required to supply the same output voltage as with a linear capacitance. As a result the power capability, plotted in Figure 5, decreases. As Vcc approaches zero, Pmax approaches the ideal linear capacitor Pmax of 0.0981. As Vcc increases Pmax asymptotically approaches 0.0756.

Avtech image

Fig. 4. Maximum collector voltage.

Avtech image

Fig. 5. Normalized power capability.

Figures 4 and 5 indicate that the nonlinear nature of parasitic capacitors must be taken into account when specifying the breakdown voltage of the transistor. Figure 6 shows the difference between the collector voltages of a circuit with nonlinear capacitance and one with linear capacitance. The waveforms were calculated by substituting the derived values for I, c, Avtech image, and C0 into (2.10) for the case of Vcc = 5V. Qualitatively, one would expect that since the nonlinear capacitance is largest at zero voltage, the waveform will rise more slowly than in the linear case. As the voltage increases, the capacitance will decrease, and hence the voltage should begin to rise more quickly than in the linear case. This is in fact observed in the waveforms of Figure 6.

Avtech image

Fig. 6. Collector waveforms for Vcc = 5V.

VII. Conclusions

The circuit parameters and voltage and current waveforms have been derived for optimum class E operation at 50% duty cycle, with a nonlinear shunt capacitance. It was shown that although the output voltage and current are not affected by the presence of the capacitance nonlinearity, the peak voltage across the transistor increases relative to the linear case, and the normalized power capability decreases. This can lead to junction breakdown if not accounted for. This analytical theory should prove useful in implementing high speed communications circuits at 900 MHz and above where the parasitic capacitance can be the speed-limiting factor, precluding the use of added linear capacitance.

References

[1] N. O Sokal and A. D. Sokal, "Class E - A New Class of High-Efficiency Tuned Single-Ended Switching Power Amplifiers," IEEE J. Solid-State Circuits, vol. SC-10, pp.168-176, June 1975.

[2] F. H. Raab, "Effects of Variations on the Class E Tuned Power Amplifier," IEEE J. Solid-State Circuits, vol. SC-13, pp.239-247, April 1978.

[3] N. O. Sokal and F. H. Raab, "Harmonic Output of Class-E RF Power Amplifiers and Load Coupling Network Design," IEEE J. Solid-State Circuits, vol. SC-12, pp.86-88, Feb. 1977.

[4] F. H. Raab, "Idealized Operation of the Class E Tuned Power Amplifier," IEEE Trans. Circuits and Systems, vol. CAS-24, pp.725-735, Dec. 1977.

[5] M. Kazimierczuk, "Effects of the Collector Current Fall Time on the Class E Tuned Power Amplifier," IEEE J. Solid-State Circuits, vol. SC-18, pp.181-193, April 1983.

[6] M. Kazimierczuk and K. Puczko, "Exact Analysis of Class E Tuned Power Amplifier at any Q and Switch Duty Cycle," IEEE Trans. Circuits and Systems, vol. CAS-34, pp.149-159, Feb. 1987.

[7] C. P. Avratoglou and N. C. Voulgaris, "A New Method for the Analysis and Design of the Class E Power Amplifier Taking into Account the QL Factor," IEEE Trans. Circuits and Systems, vol. CAS-34, pp.687-691, June 1987.

[8] R. E. Zulinski and J. W. Steadman, "Class E Power Amplifiers and Frequency Multipliers with Finite DC-Feed Inductance," IEEE Trans. Circuits and Systems, vol. CAS-34, pp.1074-1087, Sept. 1987.

[9] M. Kazimierczuk and W. A. Tabisz, "Class C-E High-Efficiency Tuned Power Amplifier," IEEE Trans. Circuits and Systems, vol. CAS-36, pp.421-428, Mar. 1989.

[10] K. J. Herman, R. E. Zulinski, and J. C. Mandojana, "An Efficient Computer Program For The Exact Analysis Of Class E Amplifiers," Proc. 32nd Midwest Symp. on Circuits and Systems, vol.1, p.478-481, Aug. 1989.

[11] J. C. Mandojana, and R. E. Zulinski, "Computer-Aided Design of Class E Amplifiers", Proc. 34th Midwest Symp. on Circuits and Systems, p.866-869, May 1991.

[12] H. L. Krauss, C. W. Bostian, F. H. Raab, Solid State Radio Engineering, New York: Wiley, 1980, p.350.