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HOME > The Unusual Diode FAQ - Title Page > The Unusual Diode FAQ - IV.24 - Laser diodes

I-V CurveIV.24 - Laser diodes?

This section was contributed by Kathy Meehan, meehan@srvr.third-wave.com.

The first semiconductor lasers were fabricated in 1962 independently by three different groups (GE, IBM and ???, none of which currently makes semiconductor lasers). They are utilized in a number of different applications, most notably the compact disc players. The commercially available wavelengths cover a spectral range (with a few holes) from the visible to the mid-infrared, with a blue GaN laser on one horizon and HgCdTe lasers on the other.

A laser can be described as a gain medium in an optical cavity. In the case of a semiconductor laser, the gain medium is a specific layer, usually sandwiched by a p-type and n-type layer - the reason why they are frequency refered to as laser diodes. The gain medium, generally called the active region, is a direct bandgap semiconductor. The population inversion is created by forward biasing the p-n junction, injecting electrons and holes into the gain medium. These electrons and holes recombine to create light, photons. In an indirect semiconductor such as Si,Ge, and GaP, the electrons and holes recombine to create heat, phonons. The photons created have an energy approximately equal to the bandgap of the material used in the active region. In order to have red light, the active region must be composed of material with a bandgap of ~640nm (GaInP). The active region composed of InGaAs will emit light at ~1.65um. The optical cavity can be formed by breaking the semiconductor along crystal planes (a process called cleaving). The reflectivity of these natural mirrors is ~30%, but can be modified by applying dielectric coatings to create high or low reflectivity mirrors.

Visit this laser FAQ for some more practical information on buying and using laser diodes.

References:

Companies: See also The Laser-Focus Buyers Guide or The Photonics Directory, Laurin Publication

High Power Lasers: Laser bars and/or muliple laser diodes coupled to multimode fiber, Optical Powers >5W, multiple mode, "large" spectral output, used as slab waveguide pumps for solid state lasers, welding, laser ablation (medical).

Telecommunication Lasers (1.3um, 1.5um and EDFA pumps):

600-680nm (GaInP)

780-980nm (AlGaInAs)

1.7-2.0um (strained InGaAs)

2.7um (GaInAsSb)

3-4um (lead salts)

Vertical Cavity Surface Emitting Lasers (VCSELs)

Blue/Blue-Green (AlInGaN or II-VI)

Associated Technologies