IV.10 - GaAs Schottky Power Diodes?

Gallium arsenide has a higher bandgap energy than silicon, so Schottky diodes made with GaAs will have higher breakdown voltages, lower leakage currents, and a larger temperature range than silicon Schottky barriers. However, GaAs diodes will also have a higher forward voltage, which results in a tradeoff. GaAs also has much higher electron mobilities than silicon, which will somewhat offset the higher Vf. The Vf for GaAs Schottky diodes becomes comparable to silicon for Vbr = 200 V, so silicon is used mostly below 200V, and GaAs is being introduced for high-voltage devices.

• Motorola (many distributors)
  

  Motorola claims to have fabricated GaAs Schottky diodes with breakdown voltages as high as 800V. These devices are currently being introduced in their "Switch MGR GaAs rectifier" series. For info on this product line, call (602) 244-3550.

See also the GaAs PIN Power Diode section.