Germanium diodes find some use since Ge has a much smaller bandgap energy than Si, producing lower forward voltages. However, this smaller bandgap also makes Ge less useful at higher temperatures due to a higher leakage current. Ge diodes have been largely replaced by Si Schottky diodes for applications below 200V, and GaAs Schottky diodes above 200V.
- Germanium Power Devices Corp, 300 Brickstone Square,
York Str., Box 3065, Shawsheen Volliage Station,
Andover, MA 01810-3065
phone (508) 475-5982
fax (508) 470-1512
This company makes a line of low Vf, high current diodes. For instance, the G500R2 diode has Vf = 0.5V at I = 500 A.
They also produce an extensive line of pnp Germanium transistors, and Germanium and InGaAs photodetectors.
- Central Semiconductor Corp, 145 Adams Ave, Hauppauge, NY 11788
Phone (516) 435-1110
Fax (516) 435-1824
Central makes a line of point-contact (!) and gold-bonded Ge diodes, such as the 1N92 (Vr = 200V, Vf = 0.45, I = 150 mA). However, they are not recommended for new designs.
- BKC Semiconductors formerly made about 30 standard gold-bonded Ge diodes, and made others to order, but they
are now defunct. The product line has been acquired by Microsemi (www.microsemi.com).